Band gap tuning in Si-SiO 2 nanocomposite: Interplay of confinement effect and surface/interface bonding
| Autor: | C. Mukherjee, Ekta Rani, A. Chaturvedi, Deodatta M. Phase, Alka Ingale, Lalit M. Kukreja, Mukesh P. Joshi |
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| Rok vydání: | 2017 |
| Předmět: |
Valence (chemistry)
Nanocomposite Materials science Absorption spectroscopy Band gap business.industry Phonon Analytical chemistry General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Semimetal Surfaces Coatings and Films X-ray photoelectron spectroscopy Nanocrystal 0103 physical sciences Optoelectronics 010306 general physics 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 425:1089-1094 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.07.133 |
| Popis: | Correlation between size, bonding of Si and O at the surface/interface of Si nanocrystals and frequency of Si phonons in Si-SiO2 nanocomposites is established using Raman mapping and X-ray photoelectron spectroscopy. Corroboration of these results with absorption spectroscopy shows that lowering of direct transition of light electron conduction band to heavy hole valence band ∼2.8 and 2.95 eV is a result of the interplay between effect of electron confinement (increases band gap) and oxidation bonding environment at the surface/interface (decreases band gap) of a nanocrystal in Si-SiO2 nanocomposites. These studies have generated deeper insight into the fundamental understanding of the nanocomposite, which can allow easy optical microscopy monitoring of Si-SiO2 based device fabrication. |
| Databáze: | OpenAIRE |
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