Performance Limit Projection of Germanane Field-Effect Transistors
| Autor: | Yiju Zhao, AbdulAziz AlMutairi, Youngki Yoon, Demin Yin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
business.industry Chemistry Transistor Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Ion Effective mass (solid-state physics) law 0103 physical sciences Density functional theory Field-effect transistor Electrical and Electronic Engineering Atomic physics 0210 nano-technology Electronic band structure business Scaling Germanane |
| Zdroj: | IEEE Electron Device Letters. 38:673-676 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Here we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory and then tight-binding parameters were extracted. Device characteristics of GeH FETs are investigated using rigorous self-consistent atomistic quantum transport simulations within tight-binding approximations. Our simulation results indicate that GeH FETs can exhibit exceptional on-state device characteristics, such as high $\text{I}_{\textit {on}}$ (>2 mA/ $\mu \text{m}$ ) and large $\text{g}_{m}$ (~7 mS/ $\mu \text{m}$ ) with $\text{V}_{\textit {DD}} = 0.5$ V due to the very light effective mass of GeH (0.07m0), while maintaining excellent switching characteristics (SS ~64 mV/dec). We have also performed a scaling study by varying the channel length, and it turned out that GeH FET can be scaled down to ~14-nm channel without facing significant short channel effects but it may suffer from large leakage current at the channel length shorter than 10 nm. Finally, we have benchmarked GeH FET against MoS2 counterpart, exhibiting better suitability of GeH device for high-performance applications compared with MoS2 transistors. |
| Databáze: | OpenAIRE |
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