Investigation of Boron Gas Mixtures for Beamline Implant
Autor: | Oleg Byl, Ying Tang, Yedave Sharad N, Joseph R. Despres, Joseph D. Sweeney |
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Rok vydání: | 2016 |
Předmět: |
Materials science
Hydrogen 0211 other engineering and technologies Analytical chemistry chemistry.chemical_element 020101 civil engineering 02 engineering and technology Tungsten Ion source 0201 civil engineering law.invention Halogen lamp Beamline chemistry law 021105 building & construction Boron doping Boron Beam (structure) |
Zdroj: | 2016 21st International Conference on Ion Implantation Technology (IIT). |
DOI: | 10.1109/iit.2016.7882884 |
Popis: | Beamline implant productivity challenges associated with high dose p-type boron doping have been well documented. Recently, BF3/H2 mixtures were shown to be an effective alternative to BF3 in enabling implant tool productivity improvements through the extension of ion source life - which is accomplished with hydrogen's ability to interrupt the halogen cycle that otherwise is responsible for depositing tungsten on sensitive ion source components [1]. Presented here are additional studies of boron mixtures with the goal of further improving ion source performance. Specific mixtures tested include various compositions of BF3/B2H6 as well as BF3/B2H6/H2. Beam current and mixture stability are examined, and ion source condition observations are provided. |
Databáze: | OpenAIRE |
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