Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers
| Autor: | R. D. Jacowitz, K. Nauka, Theodore I. Kamins, D. B. Noble, J. F. Gibbons, I.L. Hoyt |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Heterojunction Epitaxy Electronic Optical and Magnetic Materials chemistry Transmission electron microscopy Rapid thermal processing Electronic engineering Optoelectronics Electrical measurements Electrical and Electronic Engineering Dislocation business Diode |
| Zdroj: | IEEE Electron Device Letters. 13:177-179 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.145012 |
| Popis: | The characteristics of diodes fabricated in thick Si/sub 1-x/Ge/sub x/ layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions. > |
| Databáze: | OpenAIRE |
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