Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

Autor: Mansour Mortazavi, Yiyin Zhou, Hameed A. Naseem, Baohua Li, Mourad Benamara, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Wei Dou, Aboozar Mosleh, John Tolle, Andrian Kuchuk, Shui-Qing Yu, Bader Alharthi, Sattar Al-Kabi
Rok vydání: 2016
Předmět:
Zdroj: Journal of Electronic Materials. 45:6265-6272
ISSN: 1543-186X
0361-5235
DOI: 10.1007/s11664-016-5031-2
Popis: This paper reports the study of Ge0.95Sn0.05/Ge0.91Sn0.09/Ge0.95Sn0.05 single quantum well (SQW) and double quantum wells (DQWs). The quantum well (QW) structures were grown on Ge buffered Si substrates using an industrial standard reduced-pressure chemical vapor deposition system. Pseudomorphically grown structures were observed using x-ray diffraction measurements. Defect-free interfaces between each layer were revealed using cross-sectional transmission electron microscopy. Atomic-scale high-resolution transmission electron microscopy and Fourier transform patterns exhibited the high crystalline quality of QWs. Temperature-dependent photoluminescence (PL) was performed, and the emission peaks attributed to the QW region were identified. The dominant optical transition changed from direct bandgap transition at 300 K to indirect bandgap transition at 10 K. Theoretical calculation showed the type-I band alignment for the QWs. Moreover, the Γ and L valley electron distributions and non-radiative lifetimes were evaluated, which further explained the PL characteristics of the QW samples.
Databáze: OpenAIRE
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