Investigation of the electrical properties of the metal-calixarene-semiconductor structures
| Autor: | G. Guillaud, B. Remaki, R. Ben Chaabane, O. El Beqqali, M. Gamoudi |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Metals and Alloys Nanotechnology Surfaces and Interfaces Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Thin-film transistor visual_art Electronic component Materials Chemistry visual_art.visual_art_medium Field-effect transistor Thin film Material properties business |
| Zdroj: | Thin Solid Films. 296:148-151 |
| ISSN: | 0040-6090 |
| Popis: | The research made to use organic materials as active elements in the electronic components and sensors has attracted much attention during the last decade. One of the interesting properties of these materials is the possibility to easily prepare stable and homogeneous thin films. In this work, we are interested in the study of the electrical properties of calixarene thin films using a metal-oligomer-semiconductor structure. The electrical study of such a structure can contribute to provide complementary information about the nature of the electrical conduction of the material and to elucidate the interface properties. The aim of this work is to study the different functioning parameters of ion selective field effect transistors and thin film transistors based on calixarenes. We present here the study of I-V characteristics and the behaviour of capacitance and conductance characteristics versus frequency. The annealing effects on the films are also investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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