Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

Autor:	Y. H. Seo, H.‐J. Lee, H. I. Jeon, D. H. Oh, K. S. Nahm, Y. H. Lee, E.‐K. Suh, H. J. Lee, Y. G. Kwang
Rok vydání:	1993
Předmět:	Thermal oxidation Materials science Photoluminescence Physics and Astronomy (miscellaneous) Silicon Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Infrared spectroscopy Porous silicon Amorphous solid symbols.namesake chemistry symbols Raman spectroscopy
Zdroj:	Applied Physics Letters. 62:1812-1814
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109557
Popis:	Porous silicon layers prepared by anodic dissolutions of silicon wafers in aqueous HF solutions reveal either crystalline phase or intermediate phase between microcrystalline and amorphous phases, depending on the anodization conditions. The configurations of hydrogen and oxygen atoms near the surface of microstructures are directly related to the light emitting characteristics of porous silicon layers. We observed that oxidation leads to the shifts of SiHn stretching modes to higher frequencies and enhanced photoluminescence intensity, which can be correlated with a charge transfer within O—Si—H bonds. We also observed that chemical treatments in trichloroethylene have similar effects as thermal oxidation.
Databáze:	OpenAIRE
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