Organic non-volatile memory device based on cellulose fibers
| Autor: | Shivadatta Prabhu, Tukaram D. Dongale, Anuja P. Rananavare, Sunil J. Kadam, Sachin Chavan, Prashant V. Anbhule |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electrospinning Active layer Non-volatile memory Cellulose fiber Mechanics of Materials 0103 physical sciences Electroforming Conductive filament Optoelectronics Degradation (geology) General Materials Science 0210 nano-technology business Layer (electronics) |
| Zdroj: | Materials Letters. 232:99-102 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2018.08.091 |
| Popis: | The present manuscript reports the development of Ag/cellulose fibers/Al memory device using the electrospinning technique. The morphological characterization suggested that the active layer is composed of micro-fibers. The developed device shows fingerprint pinched hysteresis loop of the memristive device in I–V plane without any additional electroforming step. An excellent endurance for 6 × 103 resistive switching cycles with 10x memory window is achieved. Furthermore, the data retention capability of the developed device is extended for the 3 × 102 seconds without any observable degradation in the resistance states. The statistical results suggested that the high resistance state loosely distributed whereas tight distribution is observed for low resistance state. The electrical characterization results suggested that the formation and breaking of Ag conductive filament in the active cellulose fiber layer are responsible for the bipolar resistive switching effect. Our results suggested that the cellulose fibers based memristive device is a potential candidate for the organic non-volatile memory application. |
| Databáze: | OpenAIRE |
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