III-Nitride nanowires lasers
| Autor: | George T. Wang, Ting S. Luk, Jeremy B. Wright, Sheng Liu, Jeffrey J. Figiel, Igal Brener, Daniel D. Koleske, Steven R. J. Brueck, Benjamin Leung, Ganesh Balakrishnan, Changyi Li |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Nanowire Gallium nitride Optical polarization 02 engineering and technology Nitride 021001 nanoscience & nanotechnology Polarization (waves) Laser 01 natural sciences law.invention chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics 0210 nano-technology business Lasing threshold |
| Zdroj: | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). |
| Popis: | Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning. |
| Databáze: | OpenAIRE |
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