Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
| Autor: | Myung Ok Kyun, Young Gon Kim, Su Hun Choi, Kap Ryeol Ku, Park Jong Hwi, Jung-Woo Choi, Jung Gyu Kim, Jung Doo Seo, Won-Jae Lee |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystal Mechanics of Materials Simple (abstract algebra) Electrical resistivity and conductivity Scientific method 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:23-26 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.23 |
| Popis: | 6H-SiC single crystal was grown with simple modification in PVT process to investigate the aspect of resistivity change in crystal. The modified process consisted of a new initial step to get rid of impurities in the growth cell before the main growth of SiC crystal. The new step in the modified process was designed to consist of higher temperature than the growth temperature for sublimation of impurities. SiC crystal grown with using 2 times of impurities sublimation process (ISP) step exhibited lower variation of resistivity value on whole wafer than SiC grown using with 1 time. With implementation of new modified step in growth process, SiC single crystal with resistivity value above 103Ωcm could be obtained by simple PVT process and conventional low-purity SiC source material. |
| Databáze: | OpenAIRE |
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