Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method

Autor:	Wang Liang-Yong, Song Zhi-Tang, Feng Song-Lin, Liu Qi-Bin, Zhang Kai-liang, Chen Bomy
Rok vydání:	2006
Předmět:	Energy Dispersive Spectrometer Phase-change memory Materials science business.industry Scanning electron microscope Chemical-mechanical planarization Electrode Copper interconnect General Physics and Astronomy Optoelectronics Array data structure Wafer business
Zdroj:	Chinese Physics Letters. 23:2296-2298
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/23/8/091
Popis:	A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90 mA and 1.15 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1eb9b70fcc8f525203e303fe683cd961 https://doi.org/10.1088/0256-307x/23/8/091 Zobrazit plný text záznamu