Plasma emission spectroscopy and its relation to the refractive index of silicon nitride thin films deposited by reactive magnetron sputtering
| Autor: | N Abundiz-Cisneros, O. Hernandez Utrera, C. J. Diliegros-Godines, R. Sanginés, R. Machorro-Mejía |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Acoustics and Ultrasonics business.industry 02 engineering and technology Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Sputtering 0103 physical sciences Optoelectronics Wafer sense organs Emission spectrum Thin film 0210 nano-technology business Refractive index Deposition (law) |
| Zdroj: | Journal of Physics D: Applied Physics. 51:095203 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/1361-6463/aaa8d4 |
| Popis: | In this work, we present a thorough study on the relation between the plasma emission and the change of the silicon nitride thin films refractive index. Thin films were grown by reactive magnetron direct current sputtering technique and deposited onto silicon wafers at different fluxes of Ar and N2 and at different working pressures. This procedure, at certain deposition parameters, produced poor quality films, i.e. films with refractive index other than pure Si3N4 films. The emission of the plasma was interrogated in real time by means of optical emission spectroscopy (OES) observing at the vicinity of the trget location. In addition, optical properties of the films were measured by in situ ellipsometric-spectroscopy and then correlated with OES observations. Changes in the film refractive index could be deduced from changes in plasma emission applying a principal component analysis. |
| Databáze: | OpenAIRE |
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