Exfoliated thin, flexible monocrystalline germanium heterojunction solar cells

Autor:	Sayan Saha, R. Garcia, Jason Mantey, D. Sarkar, William James, M. Ainom, Mohamed M. Hilali, E. U. Onyegam, Leo Mathew, Dharmesh Jawarani, Rajesh A. Rao, Sanjay K. Banerjee
Rok vydání:	2012
Předmět:	Amorphous silicon Materials science Passivation Silicon business.industry chemistry.chemical_element Germanium Heterojunction Chemical vapor deposition law.invention Monocrystalline silicon chemistry.chemical_compound chemistry law Solar cell Optoelectronics business
Zdroj:	2012 38th IEEE Photovoltaic Specialists Conference.
DOI:	10.1109/pvsc.2012.6318122
Popis:	A thin, flexible monocrystalline germanium (c-Ge) heterojunction solar cell has been developed based on a cost-effective kerfless exfoliation process and remote plasma-enhanced chemical vapor deposition (RPCVD) of hydrogenated amorphous silicon (a-Si:H). The performance of the exfoliated 50µm thick and bulk 500µm Ge heterojunction cells are compared in this paper. A superior conversion efficiency of 5.28% was achieved with the 50µm exfoliated Ge cell versus 1.78% for the bulk Ge cell, in agreement with simulation results. A record fill factor of 58.1% for an a-Si:H/c-Ge heterojunction cell is obtained with the exfoliated cell. Moreover, the conversion efficiency achieved with the 50µm exfoliated cell (without intrinsic a-Si:H passivation) is comparable to the best reported in literature with bulk Ge heterojunction cells and intrinsic a-S:H passivation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1eaf38e7fdf0e88403ded16255f5ecff https://doi.org/10.1109/pvsc.2012.6318122 Zobrazit plný text záznamu