Performance of GaAs MESFET Mixers at X Band

Autor:	Robert A. Pucel, D.J. Masse, R. Bera
Rok vydání:	1976
Předmět:	Radiation Materials science business.industry Dynamic range Transconductance X band Schottky diode Condensed Matter Physics Noise (electronics) Optoelectronics Equivalent circuit MESFET Electrical and Electronic Engineering business Intermodulation
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 24:351-360
ISSN:	0018-9480
DOI:	10.1109/tmtt.1976.1128854
Popis:	A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced MESFET mixer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1eaf2cfc4b3347617e2ef57ba582a61c https://doi.org/10.1109/tmtt.1976.1128854 Zobrazit plný text záznamu