Low-Temperature Fabrication of Si Thin-Film Transistor Microstructures by Soft Lithographic Patterning on Curved and Planar Substrates
| Autor: | Hyun-Chul Jin, John R. Abelson, Ralph G. Nuzzo, Martin K. Erhardt |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Amorphous silicon
Fabrication Materials science Silicon business.industry General Chemical Engineering chemistry.chemical_element General Chemistry Substrate (electronics) Molding (process) chemistry.chemical_compound chemistry Silicon nitride Sputtering Thin-film transistor Materials Chemistry Optoelectronics business |
| Zdroj: | Chemistry of Materials. 12:3306-3315 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm000480t |
| Popis: | We demonstrate the use of micrometer-scale polymer molding, a soft-lithographic patterning technique, as a means to fabricate amorphous silicon thin-film transistors (TFTs). Two different TFT architectures were fabricated and testeda common gate, common channel architecture for single-level patterning on a spherically curved glass substrateand an isolated channel, inverted, staggered architecture with multilevel pattern registration on a planar glass substrate. The silicon and silicon nitride films are deposited by reactive magnetron sputtering, allowing all film depositions to be carried out at temperatures at or below 125 °C, and making this fabrication process a candidate for use on plastic or other thermally sensitive substrates. We discuss the performance of polymer molding as a patterning technique for thin-film microstructures on both planar substrates and on substrates with three-dimensional curvature. |
| Databáze: | OpenAIRE |
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