Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs
| Autor: | Y. Tan, M. Jaffe, Ping-Chuan Wang, K. Bandy, David G. Brochu, R. Achanta, R. Logan, D. P. Ioannou |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Silicon on insulator 020206 networking & telecommunications 02 engineering and technology Signal Low-noise amplifier Reliability (semiconductor) 0202 electrical engineering electronic engineering information engineering Optoelectronics business Nanoscopic scale Degradation (telecommunications) Hot-carrier injection Electronic circuit |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps.2018.8353697 |
| Popis: | The Hot Carrier Injection (HCI) effects on the DC and small signal RF parameters of nanoscale Silicon-On-Insulator (SOI) nMOSFETs developed for high performance low noise amplifier (LNA) circuits are investigated. In recent years there has been an increased interest in the RF reliability [1-2] but very few studies have focused on LNA devices [3]. This is the first study done on thin-film SOI nFETs scaled down to 35 nm where stress experiments specifically designed to address the LNA operational bias conditions and RF figures-of-merits (FoMs) are carried out. The obtained results provide a deeper understanding of the correlation of the shift in the small signal parameters to the DC parameters and thus lay the foundation for a reliability-aware RF LNA design. |
| Databáze: | OpenAIRE |
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