| Autor: |
Kai Zang, Jieyang Jia, Krishna C. Saraswat, Ching-Ying Lu, Zheng Lyu, James S. Harris, Muyu Xue, Yusi Chen, Raisul Islam, Albert Pleus, Yijie Huo, Christian Tae, Daniel DeWitt, Theodore I. Kamins, Junyan Chen |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC). |
| Popis: |
Thin film crystalline silicon (c-Si) solar cells have been a potential candidate to reduce the capital expenditure associated with traditional silicon photovoltaic market. However the contact recombination becomes major concern preventing the thin-film cell performance reaching the theoretical efficiency. To reduce the effect of this problem, low-cost and silicon-compatible process is needed to suppress the contact recombination. In this work, thin film nickel oxide (NiO x ) is proposed as hole-selective interlayer for c-Si solar cells, which could potentially reduce the contact recombination between p-Si/metal interfaces. The thin film NiO x layer is integrated with $2 \mu \mathrm{m}$ thick ultra-thin c-Si solar cells bye-beam evaporation. Cell performance including open circuit voltage and efficiency are presented and discussed under different NiO x thickness and annealing condition. Experimental results showed 6mV Voc enhancement when Snm thick NiO x is inserted when annealing condition is optimized. However the interface quality becomes another concern due to the increased series resistance associated with the extra NiO x layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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