In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides
| Autor: | Mikko Ritala, Markku Leskelä, Kjell Knapas, Timo Hatanpää |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Antimony telluride
Reaction mechanism General Chemical Engineering Analytical chemistry chemistry.chemical_element Germanium 02 engineering and technology General Chemistry Quartz crystal microbalance Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Cadmium telluride photovoltaics 0104 chemical sciences Atomic layer deposition chemistry.chemical_compound chemistry Telluride Materials Chemistry 0210 nano-technology |
| Zdroj: | Chemistry of Materials. 22:1386-1391 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm902180d |
| Popis: | Reaction mechanisms in the atomic layer deposition (ALD) of Sb2Te3 from SbCl3 and (Et3Si)2Te at 60 °C and GeTe from GeCl2·C4H8O2 (1,4-dioxane complex of GeCl2) and (Et3Si)2Te at 90 °C were studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). Also some experiments were conducted on reactions in ALD of the phase change material GST (germanium antimony telluride, Ge2Sb2Te5). The byproduct in both the binary telluride processes was found to be Et3SiCl, and about 78% (36%) of it was released during the SbCl3 (GeCl2·C4H8O2) pulse. Obviously −Te(SiEt3) surface groups serve as reactive sites for the metal precursors, cf. −OH surface groups in the oxide ALD processes that use water as the oxygen source. The dioxane, on the other hand, was expectedly found to be released entirely during the GeCl2·C4H8O2 pulse. When depositing GST the mechanism of the SbCl3-(Et3Si)2Te reaction was found to change so that only about 50% of the byproduct Et3SiCl was released during the SbC... |
| Databáze: | OpenAIRE |
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