| Autor: |
J. Heddleson, G. Nivison, W. Cowden, D. Blomberg, Julie Morrison, W. Paulson, Patrice M. Parris, V. Venkatesan, D. Collins, B. Baumert, E. de Fresart, R. De Souza |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics. |
| Popis: |
This paper presents the integration of multivoltage analog and power devices into a 0.25 /spl mu/m CMOS + flash memory process based on Motorola's HiPerMOS/spl trade/ platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to more than 40 V, as well as high sheet resistance precision resistors, have been fabricated with the addition of only 3 simple masked implants to the existing process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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