Changes in the vacancy size distribution induced by non-bonded hydrogens in hydrogenated amorphous silicon
| Autor: | Mitsuoki Hishida, Takeyuki Sekimoto, Mitsuhiro Matsumoto, Akihiko Sagara, Akira Terakawa |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Silicon Relaxation (NMR) Analytical chemistry Nanocrystalline silicon chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Nuclear magnetic resonance chemistry Vacancy defect 0103 physical sciences Materials Chemistry Ceramics and Composites Atomic number Fourier transform infrared spectroscopy 0210 nano-technology Spectroscopy |
| Zdroj: | Journal of Non-Crystalline Solids. 447:207-211 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2016.05.030 |
| Popis: | It was demonstrated that the presence of large amounts (≥ 2.8 at.%) of non-bonded hydrogens (NBHs) in hydrogenated amorphous silicon (a-Si:H) resulted in changes in the vacancy size distribution, where the vacancy size distribution was determined using positron annihilation lifetime spectroscopy. NBHs in small vacancies induced large nanovoids (>~1 nm), via the relaxation of internal stresses in the a-Si network, without decreasing the atomic number density of the silicon. |
| Databáze: | OpenAIRE |
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