Controlling Band Alignment at the Back Interface of Cadmium Telluride Solar Cells using ZnTe and Te Buffer Layers
Autor: | Fadhil K. Alfadhili, Geethika K. Liyanage, Manoj K. Jamarkattel, Adam B. Phillips, Michael J. Heben, Jacob M. Gibbs |
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Rok vydání: | 2019 |
Předmět: |
Materials science
business.industry Open-circuit voltage Mechanical Engineering Photovoltaic system 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Cadmium telluride photovoltaics Buffer (optical fiber) 0104 chemical sciences Barrier layer Band bending Mechanics of Materials Optoelectronics General Materials Science Thin film 0210 nano-technology business Layer (electronics) |
Zdroj: | MRS Advances. 4:913-919 |
ISSN: | 2059-8521 |
Popis: | Formation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the barrier for the hole current, improving open circuit voltage (VOC) and the fill factor. Over the past years, researchers have incorporated the both ZnTe and Te as buffer layers to improve CdTe device performance. Here we compare device performance using these two materials as buffer layers at the back of CdTe devices. We show that using Te in contact to CdTe results in higher performance than using ZnTe in contact to the CdTe. Low temperature current density-voltage measurements show that Te results is a lower barrier with CdTe than ZnTe, indicating that Te has better band alignment, resulting in less downward bending in the CdTe at the back interface, than ZnTe does. |
Databáze: | OpenAIRE |
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