Simulation of Photo-Induced Annealing of Radiation Defects in III-V MJ SCs
| Autor: | Emelyanov, V.M., Chosta, O.I., Kalyuzhnyy, N.A., Lantratov, V.M., Mintairov, S.A., Shvarts, M.Z., Timoshina, N.Kh. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-1cv.6.3 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 536-539 Presented is a model of photo-induced annealing of radiation defects. Photo-induced annealing of the AlGaAs/GaAs solar cells irradiated by 3 MeV electrons at sunlight concentration rates of 250 and 500 has been investigated. Parameters of the elaborated model have been determined. Simulation of radiation degradation of GaInP/GaInAs/Ge solar cells with built-in Bragg reflectors at irradiation by 3 MeV electrons with allowing for photoinduced annealing has been carried out. It has been shown that the defects created by these particles can be annealed out quite easily, which results in a substantial decrease of the rate of the radiation degradation of the triple-junction SCs, and, after a doze of 3·1015 cm-2 of 3 MeV electrons, it is possible to obtain the efficiency by 5 % greater compared with the estimation obtained without allowing for the photo-induced annealing. |
| Databáze: | OpenAIRE |
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