The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures
| Autor: | R E Hummel, D E Burk, M M S Puga |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
inorganic chemicals
Materials science Spreading resistance profiling Silicon Doping technology industry and agriculture Analytical chemistry Silicon on insulator Mineralogy chemistry.chemical_element equipment and supplies Condensed Matter Physics complex mixtures Electronic Optical and Magnetic Materials stomatognathic diseases Ion implantation chemistry Electrical resistivity and conductivity Impurity Materials Chemistry Electrical and Electronic Engineering Layer (electronics) |
| Zdroj: | Semiconductor Science and Technology. 7:1067-1071 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/8/007 |
| Popis: | The influence of traces of transition metals on the electrical properties of the top silicon layer of SIMOX (separation by implanted oxygen) structures was investigated using spreading resistance. A comparative study of silicon containing Fe, Cr and Mo with non-contaminated silicon, implanted and annealed under the same conditions was performed. The resistivity of the top silicon layer was found to be lower for samples which contained transition metal impurities, which is primarily attributed to the n-type doping effects of Cr retained in the top layer. |
| Databáze: | OpenAIRE |
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