Fowler-Nordheim tunnelling injection in the Si-SiO2system treated with argon plasma
| Autor: | A Paskaleva, E Atanassova |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Effective density
Argon Oxide Analytical chemistry chemistry.chemical_element Charge (physics) Plasma Condensed Matter Physics Electronic Optical and Magnetic Materials Fowler nordheim chemistry.chemical_compound chemistry Electrode Materials Chemistry Electrical and Electronic Engineering Atomic physics Quantum tunnelling |
| Zdroj: | Semiconductor Science and Technology. 8:1566-1570 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/8/8/013 |
| Popis: | The bulk positive charge in SiO2 layers (420-620 AA) generated by RF-soft Ar plasma has been studied by the high-field Fowler-Nordheim injection technique. It is proposed that the reduction in barrier height (0.4-0.5 eV) observed is a result of this plasma-created charge, which is located in the vicinity of the injecting gate electrode. Using both current-voltage and current-time characteristics, present a new experimental method for determining the effective density of trapped charge. It has been found that after plasma treatment the trapped charge increases to a value of 5*1011 cm-2 and 15*1011 cm-2 for plasma exposure times of 5 and 20 min respectively. The charge centroid does not depend on the plasma exposure time or oxide thicknesses used. The plasma-generated positive charge is associated with the E' centres resulting from the plasma breaking of strained Si-O bonds. |
| Databáze: | OpenAIRE |
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