Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current
| Autor: | Yoon Young Jun, Kang In Man, Jang Young In, Eun Hye Rim, Seo Jae Hwa, Kwon Ra Hee, Lee Jung‐Hee |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor Biomedical Engineering Induced high electron mobility transistor Bioengineering Heterojunction 02 engineering and technology General Chemistry Condensed Matter Physics Fin (extended surface) law.invention law 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science Current (fluid) business High electron |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 16:10193-10198 |
| ISSN: | 1533-4899 1533-4880 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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