Investigation of microwave assisted annealing on AP-PECVD fabricated In-Ga-Zn-O thin film transistors under positive bias temperature stress
| Autor: | Bo-Wen Huang, Hsin-Ying Chen, Chia-Yao Cheng, Yao-Jen Lee, Kow-Ming Chang, Jui-Mei Hsu, Jian-Hong Lin, Chien-Hung Wu |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Atmospheric pressure business.industry Annealing (metallurgy) Transistor 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences law.invention Chemisorption Hall effect Plasma-enhanced chemical vapor deposition law Thin-film transistor 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). |
| Popis: | In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of −1.23 V, SS of 0.18 V/dec, µFE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress. |
| Databáze: | OpenAIRE |
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