Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling

Autor:	T. Wada, H. Iwai, B. Baccus, N. Shigyo, M. Norishima
Rok vydání:	2002
Předmět:	Ion implantation Materials science Annealing (metallurgy) business.industry Impurity Thermal Electronic engineering Optoelectronics Non-equilibrium thermodynamics Semiconductor device Diffusion (business) business Common emitter
Zdroj:	Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
DOI:	10.1109/bipol.1991.161002
Popis:	The influence of ion-implantation damage on the formation of emitter and base in advanced bipolar technologies is studied. A novel nonequilibrium diffusion model has been developed to analyze this issue. By comparing simulation and experiments on a 0.5- mu m BiCMOS technology, transient-enhanced diffusion phenomena for rapid thermal anneal and furnace annealing are discussed. Two-dimensional effects are reported. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1e5d34d4f6c5cf4dee165cfaa7a3f9af https://doi.org/10.1109/bipol.1991.161002 Zobrazit plný text záznamu