Deposition of ZnO thin films on SiO2/Si substrate with Al2O3 buffer layer by radio frequency magnetron sputtering for high frequency surface acoustic wave devices
| Autor: | Hong-Yi Su, Wen-Ching Shih, Mu-Shiang Wu |
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| Rok vydání: | 2009 |
| Předmět: |
Diffraction
Materials science Scanning electron microscope business.industry Surface acoustic wave Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Semiconductor Materials Chemistry Sapphire Optoelectronics Thin film Center frequency business Layer (electronics) |
| Zdroj: | Thin Solid Films. 517:3378-3381 |
| ISSN: | 0040-6090 |
| Popis: | ZnO films with c-axis (0002) orientation have been grown on SiO2/Si substrates with an Al2O3 buffer layer by radio frequency magnetron sputtering. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The center frequency of the surface acoustic wave (SAW) device with a 4.8 μm thick Al2O3 buffer layer was measured to be about 408 MHz, which was much higher than that (265 MHz) of ZnO/SiO2/Si structure and approaches that (435 MHz) of ZnO/sapphire. It is a possible way as an alternative for the sapphire substrate for the high frequency SAW device applications, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate. |
| Databáze: | OpenAIRE |
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