Fabrication of 0.5 μm NMOS-devices by all level X-ray lithography
| Autor: | H. Lüthje, Uwe Mackens, Pierre H. Woerlee, A.J. Walker, Ulrich Mescheder, F. Mund, Casper A. H. Juffermans, H. Lifka |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Overlay Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Stress (mechanics) Optics law X-ray lithography Electrical and Electronic Engineering business Saturation (magnetic) Lithography NMOS logic |
| Zdroj: | Microelectronic Engineering. 9:89-92 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(89)90020-8 |
| Popis: | SiC/Au masks have been used for the fabrication of half-micron devices by SOR-based X-ray lithography. To meet the high demands on overlay accuracy we have used rigid SiC-membranes combined with a stress reduced Au-absorber for X-ray mask fabrication. Thus pattern placement accuracy of the e-beam written master masks for the four lithographic levels is better than 150 nm (3σ) over an exposure field of 2x2cm 2 . The high optical transparency of SiC-masks will result in an alignment accuracy of ±50 nm. The performance of the fabricated NMOS-devices with an effective gatelength L eff = 0.5 μm is demonstrated by the driving capability of 153 μS/μm in the saturation region. The transistors are adequately turned off at zero gate bias and show negligible short channel effects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|