Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
| Autor: | Joachim Stellmach, Christoph Reich, Christopher L. Chua, N. M. Johnson, Michael Kneissl, Markus Weyers, V. Kueller, Zhihong Yang, A. Knauer, Tim Wernicke, Anna Mogilatenko |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Coalescence (physics)
Materials science business.industry Wide-bandgap semiconductor Epitaxy medicine.disease_cause Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Planar Optics law Sapphire medicine Optoelectronics Electrical and Electronic Engineering Dislocation business Ultraviolet Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 24:1603-1605 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2012.2210542 |
| Popis: | A reduction of the threading dislocation density in AlN layers on a sapphire from 1010 cm-2 to 109 cm-2 was achieved by applying epitaxial lateral overgrowth (ELO) of patterned AlN and sapphire templates. By varying the growth temperature, it is possible to influence the lateral growth rate and modulate the thickness before coalescence. With a two-step growth at two different temperatures, up to 11-μm thick crackfree layers were achieved. Using these ELO AlN templates, the light emitting diode (LED) output power was >;1 mW dc at 295 nm and ~ 4mW at 324 nm which is a significant increase compared to planar templates. The usefulness of modulated ELO AlN templates for ultraviolet LEDs has thus been validated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|