Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)
| Autor: | Soon Mok Ha, Sook Yun, Woo Sik Kim, Hyung Ho Park |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Scanning electron microscope Metals and Alloys Analytical chemistry Mineralogy Surfaces and Interfaces Microstructure Ferroelectricity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hysteresis Sweep rate Materials Chemistry Field-effect transistor Tube furnace Sol-gel |
| Zdroj: | Thin Solid Films. :575-578 |
| ISSN: | 0040-6090 |
| Popis: | The effects of microstructure on the electrical properties of Ln 2 Ti 2 O 7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y 2 O 3 /Si substrates using the sol–gel and spin-coating method. The films were crystallized at 800 °C in O 2 for 30 min in a tube furnace by direct insertion. According to the A-site cation, the different tendencies in ferroelectric properties between films and single crystals were observed. The ferroelectric parameters are: Pr=4.4 μC/cm 2 , Ec=131 kV/cm for Nd 2 Ti 2 O 7 film; and Pr=1.8 μC/cm 2 , Ec=75.28 kV/cm for La 2 Ti 2 O 7 film, respectively. C-V characteristics of Ln 2 Ti 2 O 7 /Y 2 O 3 /Si structure were measured to investigate the ferroelectric memory effects at 1 MHz with a bias sweep rate of 0.18 V/s. The values of the memory window were 2.7 and 2.3 V for Nd 2 Ti 2 O 7 and La 2 Ti 2 O 7 films with 7 V of applied voltage, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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