Wearout and Breakdown in Thin Silicon Oxide
| Autor: | D. J. Dumin |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment business.industry Chemistry Electrical engineering Oxide chemistry.chemical_element Condensed Matter Physics Fluence Surfaces Coatings and Films Electronic Optical and Magnetic Materials Impact ionization chemistry.chemical_compound Materials Chemistry Electrochemistry Optoelectronics High field Transient (oscillation) business Silicon oxide Voltage |
| Zdroj: | Journal of The Electrochemical Society. 142:1272-1277 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2044163 |
| Popis: | A model describin how wearout leads to breakdown in thin silicon oxides has been developed. During wearout traps are generated inside of the oxide and at the oxide interfaces. In oxides thinner than 20 nm the dominant trap generation mechanism is determined by high field emission processes and not impact ionization. Locally higher current densities through the traps generated during wearout lead to local breakdown. This model is critically dependent on measurement of the traps generated inside of the oxide during the wearout and the measurement of these traps is described. The random nature of the wearout process is related to the statistical breakdown distributions. The ability of this model to describe oxide charging, low-level leakages, transient currents, the role of asperities, polarity dependences, and the fluence, time, thickness, voltage, and temperature dependences of oxide breakdown distributions are described |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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