Study of a DEPJFET pixel matrix with continuous clear mechanism
| Autor: | Gerhard Lutz, P. Klein, Robert Richter, W. Neeser, G. Cesura, Peter Fischer, Norbert Wermes |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon pixel detectors Pixel Laser diode Physics::Instrumentation and Detectors business.industry JFET law.invention Small-signal model Optics law Computer Science::Computer Vision and Pattern Recognition Rise time Homogeneity (physics) Optoelectronics Pixel matrix business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 392:254-259 |
| ISSN: | 0168-9002 |
| Popis: | A new kind of silicon pixel detector with integrated amplification has been built and tested. Each pixel consists of a p -channel JFET located on a fully depleted substrate. The pixel size can be customized by using a drift-chamber-like transport mechanism in each pixel. The homogeneity of the signal response of a small matrix was investigated with a laser diode. The measured rise time and gain of the device are analyzed with a simple small signal model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect