Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
| Autor: | Stephen P. Buchner, Daniele M. Monahan, Robert A. Weller, Ronald D. Schrimpf, Stephen LaLumondiere, John A. Kozub, Dale McMorrow, J. P. Bonsall, Joel M. Hales, Liang Wang, Sharon M. Weiss, Ani Khachatrian, Chuanmin Wang, En Xia Zhang, Landen D. Ryder, Yuanfu Zhao, Kaitlyn L. Ryder, Andrew L. Sternberg, Robert A. Reed |
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| Rok vydání: | 2021 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon 010308 nuclear & particles physics business.industry chemistry.chemical_element Charge (physics) Electrostatic induction Laser Epitaxy 01 natural sciences law.invention Ion Nuclear Energy and Engineering chemistry law 0103 physical sciences Optoelectronics Transient (oscillation) Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 68:626-633 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2021.3060339 |
| Popis: | Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms. |
| Databáze: | OpenAIRE |
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