Negative-effective-mass ballistic field-effect transistor: Theory and modeling

Autor:	Z. S. Gribnikov, A. N. Korshak, Vladimir Mitin, Nizami Vagidov
Rok vydání:	2000
Předmět:	Physics Condensed matter physics Terahertz radiation Oscillation Transistor General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Effective mass (solid-state physics) law Dispersion relation Field-effect transistor Quantum well Diode
Zdroj:	Journal of Applied Physics. 87:7466-7475
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.373011
Popis:	We consider p+pp+ diodes, in which the middle p region (base) consists of a p-type quantum well current-conducting channel that is controlled by a gate potential. Hole concentrations in the channel are assumed to be such that a ballistic current flows only in the lowest quantized subband. This subband contains a negative-effective-mass (NEM) section in the dispersion relation. We carry out numerical simulation for realistic designs of this ballistic field-effect transistor (FET) and compare them to simple analytical estimates. We show that three types of self-organized terahertz current oscillations appear in these FETs. Two of these types originate from the NEM instability, while the third arises from the two-stream instability, predicted before for conventional ballistic diodes and FETs. Frequencies of the NEM oscillations are controlled effectively by a gate potential. They are substantially higher than frequencies of two-stream oscillations. The NEM oscillation frequencies exceed 2.5 THz for large enh...
Databáze:	OpenAIRE
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