Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

Autor:	J. Sipowska, S. J. Clarke, J. Holt, Rachel Goldman, V. Rotberg, Anthony H. Francis, W. Ye, X. Weng, A. Daniel, Roy Clarke, S. Kumar
Rok vydání:	2002
Předmět:	Ostwald ripening symbols.namesake Crystallography Lattice constant Photoluminescence Ion implantation Ion beam Chemical physics Band gap Annealing (metallurgy) symbols General Physics and Astronomy Crystallite
Zdroj:	Journal of Applied Physics. 92:4012-4018
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1504177
Popis:	We have investigated the evolution of structural and optical properties of GaAsN nanostructures synthesized by N ion implantation into epitaxial GaAs, followed by rapid thermal annealing. Transmission electron microscopy and x-ray diffraction indicate the formation of nanometer-sized crystallites with lattice parameters close to those of pure zincblende GaN. The average crystallite size increases with annealing temperature while the size distribution is self-similar and the volume fraction remains constant, suggesting a coarsening process governed by Ostwald ripening. These GaAsN nanostructures exhibit significant photoluminescence in the near infrared range. The apparent lowering of the fundamental band gap is likely due to the incorporation of a small amount of As in GaN.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1e370d21dd63889e4678ba4e5b08d556 https://doi.org/10.1063/1.1504177 Zobrazit plný text záznamu