Autor:	A. K. Karakhodzhaev, M. Karimov
Rok vydání:	2000
Předmět:	inorganic chemicals Materials science Silicon business.industry Photoresistor technology industry and agriculture Analytical chemistry General Physics and Astronomy chemistry.chemical_element Degree (temperature) Rhodium law.invention Optics Photosensitivity chemistry Impurity law Electrical resistivity and conductivity business
Zdroj:	Russian Physics Journal. 43:509-511
ISSN:	1573-9228 1064-8887
Popis:	The influence of the electric parameters of compensating sulfur and rhodium impurities on the photosensitivity of p-type silicon is discussed in the present paper. Conditions of the increased photosensitivity ofSi andSi in the near-IR region of the spectrum are defined. The increase of the photosensitivity of compensated silicon at 300 K is found to be due to a higher degree of microinhomogeneity in the resistivity (with a simultaneous increase in the degree of compensation) irrespective of the electric parameters of the compensating impurity in silicon.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1e29869e8079b700d711c94a8e41f340 https://doi.org/10.1007/bf02508633 Zobrazit plný text záznamu Full text from SpringerLink