| Autor: |
H.J. Hovel, D. K. Sadana, P. Roitman, K. Petrillo, J. Lasky |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings. IEEE International SOI Conference. |
| DOI: |
10.1109/soi.1994.514271 |
| Popis: |
Two new classes of defects have been identified in commercial SIMOX, plasma thinned BSOI and BESOI materials. The first class of defects are revealed when the materials are treated in concentrated HF, and their density is in the range 10/sup 2/-10/sup 3/ cm/sup -2/. The second class of defects appear when the materials are etched by the enhanced Secco etch method. Contrary to the common belief defect densities of 10/sup 4/-10/sup 5/ cm/sup -2/ are present in both plasma thinned BSOI and BESOI after Secco etching. The defect densities in SIMOX after the Secco etching were 10/sup 6/-10/sup 7/ cm/sup -2/ which was expected. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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