Influence of Substrate Miscut on the Island Formation Process in In0.2Ga0.8As/GaAs Multilayers
| Autor: | D. Barlam, D. Mogilyanski, E. Gartstein |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Diffraction
Materials science Morphology (linguistics) Condensed matter physics Relaxation (NMR) Nucleation Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Crystallography Transmission electron microscopy Scientific method Materials Chemistry Deposition (law) |
| Zdroj: | Surface Review and Letters. 10:263-270 |
| ISSN: | 1793-6667 0218-625X |
| DOI: | 10.1142/s0218625x03005049 |
| Popis: | LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes. |
| Databáze: | OpenAIRE |
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