Structural studies of GaN 1‐x As x and GaN 1‐x Bi x alloys for solar cell applications

Autor:	Wladek Walukiewicz, R. dos Reis, Sergei V. Novikov, Zuzanna Liliental-Weber, Kin Man Yu, A. X. Levander, C. T. Foxon
Rok vydání:	2012
Předmět:	Materials science Amorphous metal Band gap Alloy engineering.material Condensed Matter Physics Amorphous solid law.invention Crystallography law Solar cell engineering Sapphire Crystallite Absorption (electromagnetic radiation)
Zdroj:	physica status solidi c. 9:1586-1589
ISSN:	1610-1642 1862-6351
Popis:	We have discovered materials with a wide tunability of the band gap that opens the possibility to achieve a desirable material for multi-junction solar cells. Two different alloy systems have been studied. GaN1-xAsx alloys over the entire composition range were grown by plasma-assisted MBE at low temperature on crystalline and amorphous (glass) substrates. For growth on sapphire the alloys are amorphous in the composition range of 0.17
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1e202b24d1d38e6e230aa4f066d64a7e https://doi.org/10.1002/pssc.201100582 Zobrazit plný text záznamu Plný text