InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers
| Autor: | F. J. Tegude, U. Auer, Ralf Reuter, C. Heedt, Werner Prost |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics Superlattice Alloy Transistor Binary compound Heterojunction Electron engineering.material Condensed Matter Physics law.invention Inorganic Chemistry chemistry.chemical_compound chemistry law Materials Chemistry engineering Field-effect transistor Ternary operation |
| Zdroj: | Journal of Crystal Growth. 150:1225-1229 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)80134-x |
| Popis: | InP-based heterostructure field-effect transistors (HFETs) incorporating an (InAs) 3 m /(GaAs) 1 m short-period superlattice (SPSL) subchannel are compared to HFETs using a ternary In 0.77 Ga 0.23 As alloy with respect to transport and device performance. Room temperature Hall mobility of 13100 cm 2 / V · s was measured on a (InAs) 3 /(GaAs) 1 SPSL with a two-dimensional electron sheet density of 3.1 × 10 12 cm −2 , which are the highest mobilities in such a material system so far. Sheet resistances as low as 35 Ω □ at 17 K confirm the high quality of the (InAs) 3 /(GaAs) 1 SPSL channel material resulting in high transit and unilateral gain cut-off frequencies of 63 and 190 GHz, respectively, in HFETs exhibiting gate lengths of 0.65 μm. Nevertheless, a significant improvement compared to the ternary alloy could not be verified. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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