Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions

Autor:	郭 旗 Guo Qi, 冯 婕 Feng Jie, 李豫东 Li Yu-dong, 周 东 Zhou Dong, 马林东 Ma Lin-dong, 文 林 Wen Lin
Rok vydání:	2018
Předmět:	Materials science CMOS Space and Planetary Science business.industry Absorbed dose Aerospace Engineering Optoelectronics Electrical and Electronic Engineering Image sensor Radiation business Atomic and Molecular Physics and Optics
Zdroj:	Infrared and Laser Engineering. 47:1017002
ISSN:	1007-2276
DOI:	10.3788/irla201847.1017002
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1e061d0a653c99fbf66785f2c8855951 https://doi.org/10.3788/irla201847.1017002 Zobrazit plný text záznamu