Properties of normal metal/dielectric/high-Tc junctions obtained by in-situ oxidation
| Autor: | Guy Deutscher, D. Racah |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Condensed matter physics Analytical chemistry Oxide Energy Engineering and Power Technology chemistry.chemical_element Insulator (electricity) Dielectric Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials Electronegativity Metal chemistry.chemical_compound Planar chemistry visual_art visual_art.visual_art_medium Electrical and Electronic Engineering Thin film |
| Zdroj: | Physica C: Superconductivity. 263:218-224 |
| ISSN: | 0921-4534 |
| Popis: | We describe a novel method by which normal metal/insulator/high- T c planar tunnel junctions can be obtained. In this method the thin dielectric layer is produced by the in-situ oxidation of a metal with a strong electronegativity, through diffusion of oxygen from the high- T c oxide. When applied to high- T c thin films, the resulting junction is in the underdoped regime. In a -axis YBa 2 Cu 3 O 7−δ /Al 2 O 3 /Ag junctions, in which T c has been reduced down to about 50 K, the gap structure extends up to more than 40 meV, suggesting a mean-field T c significantly higher than the measured one. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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