Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

Autor:	Yuan Liu, W. Gao, Y. Tang, M. Wu
Rok vydání:	2019
Předmět:	Equivalent noise charge CMOS Cmos active pixel sensor Silicon chemistry business.industry Ionization Semiconductor device modeling Optoelectronics chemistry.chemical_element Irradiation Cmos aps business
Zdroj:	2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED).
DOI:	10.1109/icreed49760.2019.9205164
Popis:	The modeling of total-ionization-dose (TID)-induced spatial equivalent noise charge (ENC) of a CMOS APS is firstly given. A γ-ray irradiation experiment using 60Co source is then performed to verify the models. The maximum error is less than 10% when the total dose is less than 60 krad (Si).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1de44276ad5a57e8f8406fa5fef51958 https://doi.org/10.1109/icreed49760.2019.9205164 Zobrazit plný text záznamu