The surface hybridization of diamond with vertical graphene: a new route to diamond electronics
| Autor: | Jae-Kap Lee, Hyunsu Ju, K. P. S. S. Hembram, Sohyung Lee, Hyunsik Im, Sang-Hun Jeong |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Scanning electron microscope Band gap 02 engineering and technology Chemical vapor deposition engineering.material 010402 general chemistry Epitaxy 01 natural sciences law.invention symbols.namesake law General Materials Science Electrical and Electronic Engineering Electronic band structure business.industry Graphene Process Chemistry and Technology Diamond 021001 nanoscience & nanotechnology 0104 chemical sciences Mechanics of Materials engineering symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Materials Horizons. 7:470-476 |
| ISSN: | 2051-6355 2051-6347 |
| DOI: | 10.1039/c9mh01588d |
| Popis: | Herein a method is proposed for engineering the electronic properties (including the band structure) of diamond via surface hybridization with graphene. Graphene layers (5–50 nm in thickness) were grown vertically onto a polished 〈110〉 textured polycrystalline diamond plate (1 × 1 cm2) (vGr-diamond) at ∼1300 °C via hydrogen plasma etching in a chemical vapor deposition (CVD) chamber. Due to the crystallographic relationship, the graphene layers embed at an angle of 30° to the diamond surface comprising the (110) planes. The epitaxial relationship is demonstrated via low angle X-ray diffraction (XRD), the XRD rocking curve, Raman and scanning electron microscopy. With hybridization, the diamond sample reveals a strong photoluminescent (PL) signal at ∼2.78 eV (∼450 nm). The peak was assigned to the ‘interface defects’ of the vGr-diamond hybrid structure, which are a type of ‘surface defect’ of the CVD diamond that generates a peak at ∼2.69 eV. The blue shift (∼90 meV) of the interface defects is due to the compressive strain of ∼3% applied to the interface atoms. Simulations indicate that the hybrid structures possess a finite band gap of 1.85–0.25 eV, which decreases upon increasing the thickness of the graphene layers to ∼1.4 nm. The appearance of a small band gap was attributed to the compressive strain. These findings may provide a route for diamond to become a platform for next generation and extreme electronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|