Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam
| Autor: | N.E. Aktaev, Gennady E. Remnev |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
Materials science Ion beam Silicon chemistry.chemical_element 02 engineering and technology Crystal structure Thermal diffusivity 01 natural sciences Molecular physics Ion Ion beam deposition 0103 physical sciences Materials Chemistry 010306 general physics technology industry and agriculture Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Ion implantation chemistry Diffusion process Atomic physics 0210 nano-technology |
| Zdroj: | Surface and Coatings Technology. 306:54-57 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2016.04.050 |
| Popis: | The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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