Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy

Autor:	W. W. Rhodes, Wei Gao, Robert G. Hunsperger, A.Y. Cho, Henry Miles O'bryan, G. J. Zydzik, Paul R. Berger, Deborah L. Sivco
Rok vydání:	1995
Předmět:	Materials science Physics and Astronomy (miscellaneous) Opacity Equivalent series resistance business.industry Schottky barrier chemistry.chemical_element Schottky diode Tin oxide chemistry Optoelectronics business Molecular beam epitaxy Transparent conducting film Titanium
Zdroj:	Applied Physics Letters. 66:3471-3473
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.113767
Popis:	The Schottky barrier height was measured for five different materials on undoped In0.52Al0.48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent conductors, indium‐tin‐oxide (ITO), and cadmium tin oxide (CTO) and for comparison, three were opaque metals (Au, Ti, and Pt). The barrier heights were measured using I–V measurements. Due to the high series resistance created by the undoped In0.52Al0.48As, the Norde method [J. Appl. Phys. 50, 5052 (1979)] was used to plot the I–V characteristics and extract the Schottky barrier height. The Schottky barrier heights were determined to be 0.639, 0.637, 0.688, 0.640, and 0.623 eV for ITO, CTO, Au, Ti, and Pt, respectively. Previously published results for Schottky barriers on In0.52Al0.48As are compared with our measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1dd208ce1a18c74e057ef31a08226d56 https://doi.org/10.1063/1.113767 Zobrazit plný text záznamu