Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum wellp–i–ndiodes

Autor:	C. Zanotti-Fregonara, R. Grey, J. Barnes, Massimo Mazzer, K. W. J. Barnham, John P. R. David, Carsten Rohr, Paul Griffin, G. Haarpaintner, J.S. Roberts, E. Grunbaum, C. Olson, M. A. Pate
Rok vydání:	1996
Předmět:	Materials science Condensed matter physics business.industry General Physics and Astronomy Cathodoluminescence Biasing Photodiode law.invention law Optoelectronics business Current density Quantum well Diode Molecular beam epitaxy Dark current
Zdroj:	Journal of Applied Physics. 80:5815-5820
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363574
Popis:	The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1−xAs multiquantum wells where x=0.155–0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (
Databáze:	OpenAIRE
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