A QUANTUM-SPONGE MODEL FOR POROUS SILICON

Autor: N. Ookubo, S. Sawada
Rok vydání: 1996
Předmět:
Zdroj: Surface Review and Letters. :1157-1161
ISSN: 1793-6667
0218-625X
DOI: 10.1142/s0218625x96002072
Popis: We propose a “quantum-sponge” model for porous silicon. This model exhibits energy-gap widening and nonexponential decay of photoluminescence describable by the stretched exponential function. These properties are in good agreement with those observed for porous silicon. We suggest that the fractal character of its wave functions is the origin of the nonexponential decay of photoluminescence.
Databáze: OpenAIRE