A QUANTUM-SPONGE MODEL FOR POROUS SILICON
Autor: | N. Ookubo, S. Sawada |
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Rok vydání: | 1996 |
Předmět: | |
Zdroj: | Surface Review and Letters. :1157-1161 |
ISSN: | 1793-6667 0218-625X |
DOI: | 10.1142/s0218625x96002072 |
Popis: | We propose a “quantum-sponge” model for porous silicon. This model exhibits energy-gap widening and nonexponential decay of photoluminescence describable by the stretched exponential function. These properties are in good agreement with those observed for porous silicon. We suggest that the fractal character of its wave functions is the origin of the nonexponential decay of photoluminescence. |
Databáze: | OpenAIRE |
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