Sticking probability of the CN(X2Σ+) radicals onto the hydrogenated amorphous carbon nitride films
| Autor: | Kouichi Oda, Haruhiko Ito, Hidetoshi Saitoh |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Sticking coefficient
Chemistry Metals and Alloys Analytical chemistry Infrared spectroscopy Surfaces and Interfaces Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous carbon Plasma-enhanced chemical vapor deposition Materials Chemistry Sticking probability Laser-induced fluorescence Spectroscopy |
| Zdroj: | Thin Solid Films. :715-719 |
| ISSN: | 0040-6090 |
| Popis: | The sticking probability (s) of the CN(X 2 Σ + ) radicals onto the hydrogenated amorphous carbon nitride (a-CN x :H) films was determined by measuring the density of CN(X 2 Σ + ) in the gas phase, the flow speed, and the weight of a-CN x :H. The CN(X 2 Σ + ) radicals were produced by the dissociative excitation reaction of BrCN with the microwave discharge flow of Ar, and were observed by the laser induced fluorescence (LIF) spectroscopy of the CN(A 2 Π t -X 2 Σ + ), 4-0, 5-1, and 7-2 bands. The LIF intensity was calibrated against Rayleigh scattering intensity by Ar atoms, from which the density of CN(X 2 Σ + ) was determined as 1.0 x 10 18 -4.9 × 10 18 m -3 depending on the pressure of Ar (P Ar ) as 0.4-0.7 Torr. The s value was in the range of 0.032-0.019 which was also dependent on P Ar . According to the IR observation of the a-CN x :H films, the P Ar -dependence of s was found to originate in the reactivity of the CN radicals on the film surface. |
| Databáze: | OpenAIRE |
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